RBS/Channeling study of Er doped GaN films grown by MBE on Si substrates
- 17 March 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 161-163, 946-951
- https://doi.org/10.1016/s0168-583x(99)00683-7
Abstract
No abstract availableKeywords
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