High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 948-954
- https://doi.org/10.1016/s0022-0248(96)00953-0
Abstract
No abstract availableKeywords
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