Spin-resonance determination of the electron effectivegvalue ofIn0.53Ga0.47As

Abstract
The effective spin splitting of the electrons at the bottom of the conduction band in bulk In0.53 Ga0.47As was experimentally determined using two different spin-resonance techniques, optically detected spin resonance and electron paramagnetic resonance. The narrow linewidth, caused by motional narrowing, made a study of the Overhauser effect possible. The nuclear contributions from In, Ga, and As were identified by their relaxation times, and the experimental conditions necessary to avoid the build up of a nuclear magnetic field were established. The effective g value of In0.53 Ga0.47As is g*=-4.070±0.005. © 1996 The American Physical Society.