Self-assembled rare-earth silicide nanowires on Si(001)
- 29 May 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (23) , 233305
- https://doi.org/10.1103/physrevb.63.233305
Abstract
This paper presents scanning tunneling microscope images of several rare-earth metal silicides grown on silicon (001). For certain of the metals studied (Dy, Ho), an anisotropy in lattice match with the substrate results in the formation of nanowires. These nanowires have desirable properties such as nanometer lateral dimension, crystalline structure with a low density of defects, and micrometer scale length. Tunneling spectroscopy on the nanowires indicates that they are metallic.Keywords
This publication has 11 references indexed in Scilit:
- Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)Applied Physics Letters, 2000
- Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
- Formation of dysprosium silicide wires on Si(001)Journal of Physics D: Applied Physics, 1998
- Electrical resistivity in amorphous SiLn (Ln: Nd, Sm, Gd) alloy powders prepared by mechanical alloyingApplied Surface Science, 1997
- Vacancy ordering structures in epitaxial RESi2−x thin films on (111)Si and (001)SiApplied Surface Science, 1997
- Phase diagram of the holmium-silicon binary system and physical properties of holmium silicides up to 1050 °CJournal of Alloys and Compounds, 1995
- Valency changeover in Sm layers on Si(111)7×7 studied with soft-x-ray-absorption spectroscopyPhysical Review B, 1993
- Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical propertiesApplied Surface Science, 1989
- Epitaxial growth of rare-earth silicides on (111) SiApplied Physics Letters, 1986
- Valence fluctuations of ytterbium in silicon-rich compoundsJournal of the Less Common Metals, 1979