Growth of high quality CdTe on Si substrates by molecular beam epitaxy
- 1 August 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (8) , 1402-1405
- https://doi.org/10.1007/bf02655041
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: characterization by electron microscopy and optical methodsJournal of Crystal Growth, 1996
- Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substratesApplied Physics Letters, 1995
- Polarity of a (111)-oriented CdTe layer grown on a (100) Si substrateApplied Physics Letters, 1995
- Suppression of twin formation in CdTe(111)B epilayers grown by molecular beam epitaxy on misoriented Si(001)Journal of Electronic Materials, 1995
- Structure of CdTe(111)B grown by MBE on misoriented Si(001)Journal of Electronic Materials, 1993
- Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)Applied Physics Letters, 1989
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984