Surface-structure determination of the layered compounds MoS2and NbSe2by low-energy electron diffraction

Abstract
The stacking sequence and interplane and interlayer separation of 2HMoS2 and 2HNbSe2 are determined by the dynamical low-energy-electron diffraction approach. Although lateral reconstructions corresponding to alteration in the bulk stacking sequence at the surface are physically reasonable, we find that such reconstructions do not in fact occur for these two compounds.