Detection of defect structures in arsenic ion-implanted silicon by fluorine decoration

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Abstract
A series of {100} and {111} wafers were subjected to a 1×1015 F cm−2 implantation followed by an As implantation covering the range from 2×1014 to 5×1015 As cm−2 at 190 keV. Wayflow and Waycool end stations were used. The former permitted dynamic annealing resulting from a temperature rise during the implantation, the latter suppressed it. The as-implanted structures, i.e., the thicknessess of the buried and surface amorphous layers, were correlated with the implant conditions. Using an ion microprobe mass analyzer, the F distribution was measured in the as-implanted wafers, after a 550 °C regrowth anneal and after a 30 min anneal at 900 °C. Decoration of the residual defects with F permitted us to correlate their presence with implant conditions. This decoration technique was particularly sensitive to defects arising from the presence of buried amorphous layers and to a lesser degree to those generated in single crystal silicon recrystallized by dynamic annealing.