Realization of high mobilities at ultralow electron density in GaAs-Al0.3Ga0.7As inverted heterojunctions
- 7 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (19) , 1874-1876
- https://doi.org/10.1063/1.103074
Abstract
We report the first realization of extremely low free‐carrier concentration (≤4×1010 cm−2) and high LN2 electron mobilities (∼1.8×105 cm2/V s) in the dark in inverted Al0.3Ga0.7As /GaAs(100) modulation‐doped structures. The obtained results are all the more remarkable since the structures do not involve any superlattice or graded barrier, δ doping, or large spacer layer thicknesses. We attribute the observed properties to the high quality of the ambient in the molecular beam epitaxy system and the use of optimized growth kinetics and procedure as determined from reflection high‐energy electron diffraction intensity behavior.Keywords
This publication has 11 references indexed in Scilit:
- Two-dimensional electron system with extremely low disorderApplied Physics Letters, 1988
- Surface kinetic considerations for molecular-beam epitaxy growth of high-quality inverted heterointerfacesJournal of Vacuum Science & Technology B, 1988
- Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctionsApplied Physics Letters, 1988
- High-mobility variable-density two-dimensional electron gas in inverted GaAs-AlGaAs heterojunctionsApplied Physics Letters, 1988
- High-mobility inverted selectively doped heterojunctionsJournal of Vacuum Science & Technology B, 1988
- Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behaviorPhysical Review B, 1987
- Two-dimensional electron gas of very high mobility in planar doped heterostructuresJournal de Physique, 1987
- Electron energy levels in GaAs-heterojunctionsPhysical Review B, 1984
- Low temperature two-dimensional mobility of a GaAs heterolayerSurface Science, 1984
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering SpectraJournal of the Physics Society Japan, 1982