Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctions
- 13 June 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (24) , 2037-2039
- https://doi.org/10.1063/1.99574
Abstract
We report reproducible realization of GaAs/Al0.25 Ga0.75 As(100) inverted heterojunctions with liquid‐nitrogen electron mobilities in excess of 105 cm2 /(V s). This is made possible through use of reflection high‐energy electron‐diffraction (RHEED) intensity dynamics determined optimized growth conditions, but without the use of short‐period superlattices as buffers or spacer layers.Keywords
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