Electron concentrations and mobilities in selectively doped AlGaAs-GaAs-AlGaAs double heterostructures
- 1 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 387-391
- https://doi.org/10.1016/0039-6028(86)90439-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction structuresApplied Physics Letters, 1985
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBEJapanese Journal of Applied Physics, 1985
- Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructuresApplied Physics Letters, 1985
- MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High ConductivityJapanese Journal of Applied Physics, 1984
- Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer-layer thickness and gate electric fieldApplied Physics Letters, 1984
- High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1984
- A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)Japanese Journal of Applied Physics, 1984
- Use of a superlattice to enhance the interface properties between two bulk heterolayersApplied Physics Letters, 1983