Lateral resonant tunneling transistors employing field-induced quantum wells and barriers
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 79 (8) , 1131-1139
- https://doi.org/10.1109/5.92072
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
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