Degenerate n-type GaAs doped with Cr: an intermediate-valence and/or Kondo system?

10 March 1985

journal article
Published by IOP Publishing in Journal of Physics C: Solid State Physics

Vol. 18 (7) , 1431-1437
https://doi.org/10.1088/0022-3719/18/7/010

Abstract

The Cr¹⁺ level in GaAs (the so-called two-electron trap level) is investigated using optical absorption and de Haas-Shubnikov measurements for a series of heavily doped n-type samples with Fermi levels up to 120 meV above the conduction band edge. The level is shown to have the form of a broadened distribution of width 26 meV centred at 45 meV (4K) above the band edge. Analogues with intermediate-valence and Kondo systems are briefly discussed.

Keywords

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