Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon
- 18 July 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 52 (8) , 1698-1705
- https://doi.org/10.1109/ted.2005.852172
Abstract
We studied a temperature increase and a heat transfer into a substrate in a pulsed operation of 0.5 length and 150 /spl mu/m gate width AlGaN/GaN HEMTs grown on silicon. A new transient electrical characterization method is described. In combination with an optical transient interferometric mapping technique and two-dimensional thermal modeling, these methods determine the device thermal resistance to be /spl sim/70 K/W after 400 ns from the start of a pulse. We also localized the high-electron mobility transistor heat source experimentally and we extracted a thermal boundary resistance at the silicon-nitride interface of about /spl sim/7/spl times/10/sup -8/ m/sup 2/K/W. Thermal coupling at this interface may substantially influence the device thermal resistance.Keywords
This publication has 29 references indexed in Scilit:
- Thermal Modeling and Measurement of AlGaN–GaN HFETs Built on Sapphire and SiC SubstratesIEEE Transactions on Electron Devices, 2004
- Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interfaceElectronics Letters, 2004
- Electric-field-induced heating and energy relaxation in GaNApplied Physics Letters, 2003
- Transient characteristics of gan-based heterostructure field-effect transistorsIEEE Transactions on Microwave Theory and Techniques, 2003
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopyApplied Physics Letters, 2003
- Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometryIEEE Transactions on Electron Devices, 2002
- AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substratesSolid-State Electronics, 2002
- Thermal conductivity of GaN films: Effects of impurities and dislocationsJournal of Applied Physics, 2002
- Switching behaviour of GaN-based HFETs: thermal and electronic transientsElectronics Letters, 2002
- Temperature dependence of the near-infrared refractive index of silicon, gallium arsenide, and indium phosphidePhysical Review B, 1994