Annealing experiments in heavily arsenic-doped (Hg,Cd)Te
- 1 May 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (5) , 625-634
- https://doi.org/10.1007/bf02657971
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substratesPublished by SPIE-Intl Soc Optical Eng ,1992
- Molecular beam epitaxy and characterization of HgCdTe(111)B on Si(100)Applied Physics Letters, 1991
- New development on the control of homoepitaxial and heteroepitaxial growth of CdTe and HgCdTe by MBEJournal of Crystal Growth, 1991
- High Performance (Hg,Cd)Te Heterostructure Photodiode Arrays With Improved Radiation HardeningPublished by SPIE-Intl Soc Optical Eng ,1989
- Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutionsJournal of Electronic Materials, 1987
- High performance photovoltaic infrared devices in Hg1−xCdxTe on sapphireApplied Physics Letters, 1985
- Status of point defects in HgCdTeJournal of Vacuum Science & Technology A, 1985
- Mode of incorporation of phosphorus in Hg0.8Cd0.2TeJournal of Applied Physics, 1983
- Performance of PV HgCdTe arrays for 1-14-µm applicationsIEEE Transactions on Electron Devices, 1982
- HgCdTe/CdTe heterostructure diodes and mosaicsIEEE Transactions on Electron Devices, 1980