Molecular beam epitaxy and characterization of HgCdTe(111)B on Si(100)
- 1 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (1) , 81-83
- https://doi.org/10.1063/1.105530
Abstract
Up to 10‐μm‐thick HgCdTe(111)B films with 3 in. and 5 in. diameter were grown on Si(100) substrates. The films are n type, and Hall mobilities higher than 5×104 cm2 V−1 s−1 have been measured at 23 K for Cd concentration 0.26. Double‐crystal rocking curves of the HgCdTe(333) x‐ray diffraction peak with full width at half maximum as low as 180 arcsec were measured, indicating that the crystalline quality of the HgCdTe is significantly better than that of the CdTe. The Cd concentration of these films is very uniform, with a standard deviation of 2.4% of the average concentration for 5 in. samples and 0.6% for 3 in. samples.Keywords
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