Antiphase domains in GaAs grown on a (001)-oriented Si substrate by molecular-beam epitaxy

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Abstract
Antiphase domains (APDs) in the GaAs layer grown by molecular-beam epitaxy on a nominally (001)-oriented Si substrate were easily observed by molten potassium hydroxide etching or photoelectrochemical etching. The APD boundaries are almost parallel to {100} or {110} planes. The density of APDs decreases with the GaAs layer thickness in the 0.5–1.0-μm region from the GaAs/Si interface. The appearance of APDs depends on the preheating conditions of the substrate. Preheating at 950 °C for 30 min or at 1000 °C for 5 min was sufficient for the suppression of APDs. This may be due to the change of the Si surface structure and the following complete annihilation of APDs in the GaAs layer near the heterointerface.