Structural properties of Hg1−xZnxTe-CdTe strained layer superlattices and the reduction of threading dislocations from a CdTe buffer layer

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Abstract
Hg1−xZnxTe‐CdTe strained layer superlattices were grown by molecular‐beam epitaxy. Their structural properties and interplay with a CdTe buffer layer were investigated with transmission electron microscopy. There is an order of magnitude reduction in the density of threading dislocations in the superlattice compared with the CdTe buffer layer. The reduction is accomplished by using the lattice‐mismatch‐induced strain to bend threading dislocations over into the superlattice‐buffer layer interface. The magnitude of the reduction agrees well with predicted values for this system.