Temperature dependence of electron mobility for inversion-mode InP metal-insulator-semiconductor field-effect transistors

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Abstract
Surface carrier transport of electrons in inversion-mode InP metal-insulator-semiconductor field-effect transistors (MISFETs) has been investigated. This was carried out as a function of induced electron density with temperature ranging between 7 and 296 K. InP MISFETs were fabricated by using a photochemically deposited phosphorous nitride (PN) film as a gate insulator. Results of these studies indicate that electron mobility depends on temperature as T−(1–1.5) and on induced electron density as N−1/3s above Ns =5×1011/cm2 from 296 to 100 K. Below 60 K and in the low Ns region, electron mobility has a different temperature dependence and dramatically decreases as temperature decreases. These temperature and induced electron density dependences of electron mobility are probably caused by acoustic surface phonon scattering in the high-temperature region and by screened Coulomb scattering and Anderson localization of electrons in the low-temperature region. In the temperature range of 70–90 K, the maximum value for effective mobility was about 9000 cm2/V s and that for field-effect mobility was about 15 000 cm2/V s.