An experimental study of the indium antimonide thin film transistor
- 31 January 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (1) , 77-80
- https://doi.org/10.1016/0038-1101(79)90174-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The variation of resistivity with temperature for n-type degenerate indium antimonide filmsThin Solid Films, 1977
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- Influence of finite semiconductor thickness on thin film transistor characteristicsThin Solid Films, 1975
- Influence of substrate temperature on the electrical properties of thin InSb films flash-evaporated onto glassThin Solid Films, 1975
- The application of polycrystalline layers of InSb and PbTe to a field-effect transistorSolid-State Electronics, 1969
- Das Aufdampfen von Verbindungshalbleitern im HochvakuumThin Solid Films, 1969