Mesotaxy: Formation of Buried Single-Crystal CoSi2 Layers by Implantation
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High Dose Implantation of Nickel into SiliconMRS Proceedings, 1985
- Silicide Formation By High Dose Transition Metal Implants Into Si.MRS Proceedings, 1985
- Electrical transport properties of CoSi2 and NiSi2 thin filmsApplied Physics Letters, 1984
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Solid-phase epitaxial growth of Si through palladium silicide layersJournal of Applied Physics, 1975