Study of Schottky contact formation on CH4/H2reactive-ion-etched InAlAs
- 1 June 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (6) , 1226-1229
- https://doi.org/10.1088/0268-1242/9/6/011
Abstract
The formation of Schottky contacts on methane/hydrogen reactive-ion-etched (RIE) n+In0.52Al0.48As surfaces has been investigated for the first time. Two metallization systems (Ti/W/Au and Pt/Au) were examined. The ion etching-induced damage in the InAlAs surface layer was evaluated by means of I-V and C-V characterization. Rapid thermal annealing (RTA) at several temperatures was applied for damage removal. Dry-etched Schottky contacts were compared with wet-etched ones. Using the optimized condition of RTA, parameters achieved on RIE-based Schottky contacts were in agreement with theoretical predictions and comparable with thermally processed wet-based ones. The role of the thermal treatment in the final determination of metal-semiconductor interface and contact properties is discussed in detail.Keywords
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