Characteristics of Schottky diodes on AlxIn1-xAs grown by MOCVD
- 1 November 1988
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (11) , 1136-1138
- https://doi.org/10.1088/0268-1242/3/11/011
Abstract
The effects of surface pretreatment and a variety of metallisation techniques on the characteristics of Schottky diodes fabricated on AlxIn1-xAs grown by low-pressure and atmospheric-pressure MOCVD have been investigated. Barrier heights have been determined from I-V, C-V and I-T measurements and have been found to be in good agreement. Barrier heights of about 0.69 eV were measured for Al0.48In0.52As using Pt as the Schottky barrier contact.Keywords
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