Composition dependence of Au/InxAl1−xAs Schottky barrier heights
- 8 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (23) , 1593-1595
- https://doi.org/10.1063/1.97290
Abstract
The surface barrier heights φbn and room‐temperature band gaps Eg of Si‐doped InxAl1−xAs layers grown by molecular beam epitaxy on n‐type (100) oriented InP substrates have been determined as a function of composition with capacitance versus voltage, internal photoemission, photoluminescence, and double‐crystal x‐ray rocking curve measurements for 0.45<x0.78, n‐type surfaces might be accumulated and p‐type surfaces are likely to be inverted.Keywords
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