Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems
- 15 January 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (2) , 619-626
- https://doi.org/10.1063/1.353372
Abstract
The onset of misfit dislocation generation is investigated and the critical thickness is determined by transmission electron microscopy using the epitaxial lift-off technique for InGaAs/GaAs single heterostructures and single quantum wells. The observed geometries of the dislocations in both cases are in good agreement with the predicted models [J. Appl. Phys. 41, 3800 (1970) and J. Cryst. Growth 27, 118 (1974)]. However, each dislocation undergoes the predicted elongation mechanism [J. Appl. Phys. 41, 3800 (1970)] at different strained-layer thicknesses. A comparison of the predicted and the experimental critical thicknesses is given.This publication has 47 references indexed in Scilit:
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