Si indiffusion on Ge(100)-(2×1) studied by core-level photoemission
- 15 May 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (19) , 11415-11418
- https://doi.org/10.1103/physrevb.45.11415
Abstract
Core-level photoemission spectroscopy has been utilized to study the adsorption and growth of Si on Ge(100)-(2×1) by molecular-beam epitaxy. The populations of Si and Ge atoms in the surface are monitored by measuring the intensities of the surface-shifted Si and Ge core-level components. After several atomic layers of Si are deposited on Ge(100) at a growth temperature of 450 C, the top layer which forms the (2×1) reconstruction consists of Ge atoms only. This tendency for Si atoms to move below the surface persists even for growth at about room temperature.Keywords
This publication has 12 references indexed in Scilit:
- Stress-induced layer-by-layer growth of Ge on Si(100)Physical Review B, 1991
- Direct imaging of interfacial ordering in ultrathin ( superlatticesPhysical Review Letters, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surfacePhysical Review Letters, 1989
- Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scatteringApplied Physics Letters, 1989
- Diffusion of Si into Ge studied by core level photoemissionJournal of Vacuum Science & Technology A, 1989
- Structural properties of heteroepitaxial Ge films on a Si(100)-2×1 surfaceJournal of Applied Physics, 1988
- Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceJournal of Applied Physics, 1985
- The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)Surface Science, 1985
- Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 SurfacesJapanese Journal of Applied Physics, 1983