Effects of crystallinity on depth resolution in sputter depth profiles
- 1 July 1993
- journal article
- review article
- Published by Wiley in Surface and Interface Analysis
- Vol. 20 (8) , 609-620
- https://doi.org/10.1002/sia.740200802
Abstract
For sputter depth profiling the effect of the layer crystallinity on the resolution of the underlying interfaces was investigated. By applying D. Onderdelinden's model of monocrystal sputtering (Appl. Phys. Lett. 8, 189 (1966); Can. J. Phys. 46, 739 (1968)) and J. Lindhard's approach to axial ion channelling (Phys. Lett. 12, 126 (1965); K. Dan. Vidensk. Selsk. Mat. Fys. Medd. 34, No. 14 (1965)) to textured and non‐textured polycrystalline layers, it is shown that the interface resolution under these layers is largely affected by the channelling of incident ions. The strong dependence of channelling on the orientation of individual grains leads to extremely non‐uniform erosion and poor interface resolution. This model of polycrystalline layer sputtering reproduces well the dependence of depth profile shape and depth resolution on layer thickness, ion energy and incidence angle, as shown for sputter depth profiling through textured aluminium layers by inert gas ions. In the case of higher ion masses, the observed effects are slightly overestimated by the model, as anticipated from the inherent limitations of the Lindhard and the Onderdelinden approaches. The implications of channelling for depth profiles of polycrystalline layers are discussed and conclusions are drawn for appropriate selection of sputter parameters to ensure optimum depth resolution. The effects of sample temperature, continuous rotation of the sample during sputter erosion and reactive ion sputtering are also discussed.Keywords
This publication has 47 references indexed in Scilit:
- Effects of rotation and ion incidence angle on sputter depth resolution in thin films of NiFe/TaSurface and Interface Analysis, 1992
- Influence of ion mixing, ion beam‐induced roughness and temperature on the depth resolution of sputter depth profiling of metallic bilayer interfacesSurface and Interface Analysis, 1990
- Depth resolution improvements using specimen rotation during depth profilingSurface and Interface Analysis, 1989
- On the development of increasing surface roughness during ion sputteringThin Solid Films, 1987
- Auger electron spectroscopy depth profiling during sample rotationSurface and Interface Analysis, 1986
- Recent advances in sputter depth profilingJournal of Vacuum Science & Technology A, 1986
- Characterization of NBS Standard Reference Material 2135 for sputter depth profile analysisJournal of Vacuum Science & Technology A, 1985
- Surface transient behavior of the 30Si+ yield with angle of incidence and energy of an O+2 primary beamJournal of Vacuum Science & Technology A, 1985
- Transient effects in SIMS analysis for different angles of incidence of an O+2 primary ion beamApplications of Surface Science, 1985
- THE INFLUENCE OF CHANNELING ON Cu SINGLE-CRYSTAL SPUTTERINGApplied Physics Letters, 1966