Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures
- 1 August 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (8) , 1276-1285
- https://doi.org/10.1007/bf02655020
Abstract
No abstract availableKeywords
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