Characteristics of all-OMCVD Grown GaAs MESFETS on Si Substrates
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- X-Band MMIC amplifier on GaAs/SiIEEE Electron Device Letters, 1987
- GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrateIEEE Electron Device Letters, 1987
- Epitaxial growth and material properties of GaAs on Si grown by MOCVDJournal of Crystal Growth, 1986
- A dc and microwave comparison of GaAs MESFET's on GaAs and Si substratesIEEE Transactions on Electron Devices, 1986
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) SubstrateJapanese Journal of Applied Physics, 1984
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984