Plasmon broadening and temperature effects on the plasmon-phonon-assisted recombination in silicon
- 15 February 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (5) , 2630-2635
- https://doi.org/10.1103/physrevb.37.2630
Abstract
We present a detailed theoretical calculation of the plasmon-phonon-assisted recombination (PPAR) in a highly laser excited electron-hole plasma of silicon. We present results for PPAR as a function of carrier density, lattice temperature, and carrier temperature and show that the results are consistent with reflectivity measurements in Si in the picosecond and femtosecond pump- to probe-beam delay time.Keywords
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