Dynamics of optically switched bistable diode laser amplifiers
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (3) , 303-308
- https://doi.org/10.1109/jqe.1987.1073337
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Assessment of switching speed of optical bistability in semiconductor laser amplifiersElectronics Letters, 1986
- Measurement of optical bistability in an InGaAsP laser amplifier at 1.5 μmElectronics Letters, 1985
- Bistable output characteristics in semiconductor laser injection lockingIEEE Journal of Quantum Electronics, 1985
- A comparison of active and passive optical bistability in semiconductorsIEEE Journal of Quantum Electronics, 1985
- Room-temperature optical bistability in InGaAsP/InP amplifiers and implications for passive devicesApplied Physics Letters, 1985
- Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasersApplied Physics Letters, 1984
- The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1983
- Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalonApplied Physics Letters, 1982
- Injection locking properties of a semiconductor laserIEEE Journal of Quantum Electronics, 1982
- Gain, frequency bandwidth, and saturation output power of AlGaAs DH laser amplifiersIEEE Journal of Quantum Electronics, 1981