Effect of distributed charge in the nitride of an MNOS structure on the flat-band voltage
- 1 December 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (11) , 742-743
- https://doi.org/10.1063/1.88924
Abstract
Closed‐form expressions have been obtained for the flat‐band voltage of an MNOS structure with charge carriers trapped in the nitride bulk according to the Arnett‐Yun model. Within the applicable limit of this model, the following observations can be made from these flat‐band voltage expressions: When σQ (t) ≃4 or larger, the carrier distribution can be fairly accurately approximated by a step function, so far as flat‐band voltage is concerned. When σQ (t) ≃0.1 or smaller, the centroid ? of the trapped carrier distribution approaches the trapping distance x0. σ is the capture cross section and Q (t) the total number of injected carriers at time t.Keywords
This publication has 10 references indexed in Scilit:
- Nonvolatile semiconductor memory devicesProceedings of the IEEE, 1976
- Charge centroid and trapping model for MNOS structuresJournal of Applied Physics, 1976
- Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devicesApplied Physics Letters, 1975
- Measurements of charge propagation in Si3N4 filmsApplied Physics Letters, 1974
- Trapping, emission and generation in MNOS memory devicesSolid-State Electronics, 1974
- Effects of bulk trapping on the memory characteristics of thick-oxide MNOS variable-threshold capacitorsSolid-State Electronics, 1974
- Direct display of electron back tunneling in MNOS memory capacitorsApplied Physics Letters, 1973
- Characterization of thin-oxide MNOS memory transistorsIEEE Transactions on Electron Devices, 1972
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969