Study and improvement of anomalous interface states of metal-oxide-semiconductor structures induced by rapid thermal post-oxide annealing
- 15 May 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (10) , 5038-5042
- https://doi.org/10.1063/1.353774
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor structure in n+ polycrystalline silicon gate complementary metal-oxide-semiconductor technologyApplied Physics Letters, 1992
- Reliability Degradation Mechanism of Ultrathin Tunneling Oxide by PostannealingJournal of the Electrochemical Society, 1991
- Improvement of oxide quality by rapid thermal annealingJournal of Applied Physics, 1990
- Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devicesApplied Physics Letters, 1988
- Effect of RTA on Thin Thermal OxideJournal of the Electrochemical Society, 1988
- Effect of post-oxidation anneal on ultrathin SiO2 gate oxidesApplied Physics Letters, 1986
- Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2Journal of the Electrochemical Society, 1986
- Polysilicon capacitor failure during rapid thermal processingIEEE Transactions on Electron Devices, 1986
- Application of Rapid Isothermal Annealing to Shallow p‐n Junctions via BF 2 ImplantsJournal of the Electrochemical Society, 1985
- Stress in thermal SiO2 during growthApplied Physics Letters, 1979