Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor structure in n+ polycrystalline silicon gate complementary metal-oxide-semiconductor technology
- 27 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (4) , 447-449
- https://doi.org/10.1063/1.107910
Abstract
An anomalous different threshold voltage shift between P‐channel metal‐oxide‐semiconductor field effect transistor (P‐MOSFET) and N‐channel MOSFET under high temperature rapid thermal annealing (RTA) borophosphosilicate glass reflow has been studied using 1 μm n+ polygate complementary MOS technology. The boron transient enhanced outdiffusion and phosphorus pileup at channel surface, as well as the interface states generated due to the degradation of thin gate oxide under high RTA process, are proposed as the main sources of this anomalous shift. A detailed model is proposed to interpret the mechanism and some methods to solve the anomalous shift are suggested.Keywords
This publication has 6 references indexed in Scilit:
- Improvement of thin-gate oxide integrity using photo-enhanced low-temperature nitridationSolid-State Electronics, 1990
- A novel 0.5- mu m n/sup +/-p/sup +/ poly-gated salicide CMOS processIEEE Transactions on Electron Devices, 1989
- Anomalous co-diffusion effects of germanium on group III and V dopants in siliconApplied Physics Letters, 1988
- The influence of free-carrier absorption on the rapid thermal sintering processIEEE Electron Device Letters, 1987
- Transient enhanced diffusion during rapid thermal annealing of boron implanted siliconApplied Physics Letters, 1985
- Temperature transients in heavily doped and undoped silicon using rapid thermal annealingJournal of Applied Physics, 1985