High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy
- 1 June 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (6) , 590-595
- https://doi.org/10.1088/0268-1242/5/6/023
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1−xAs/N-In0.52Al0.48As heterostructuresJournal of Crystal Growth, 1989
- Band structure and charge control studies of n- and p-type pseudomorphic modulation-doped field-effect transistorsJournal of Applied Physics, 1989
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988
- Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistorsJournal of Vacuum Science & Technology B, 1987
- Molecular-beam epitaxial growth and characterization of pseudomorphic GaInAs/AlInAs modulation-doped heterostructuresJournal of Vacuum Science & Technology B, 1987
- Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxyJournal of Applied Physics, 1987
- Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular-beam epitaxy: Consequences for optical and transport propertiesJournal of Applied Physics, 1986
- Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperatureApplied Physics A, 1985
- Two-dimensional electron gas at a molecular beam epitaxial-grown, selectively doped, In0.53Ga0.47As-In0.48Al0.52As interfaceApplied Physics Letters, 1982
- Measurement of the Γ-L separation in Ga0.47In0.53As by ultraviolet photoemissionApplied Physics Letters, 1982