High mobility GaAs/AlAs/(211)Si structures grown by MBE
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 226-230
- https://doi.org/10.1016/0022-0248(87)90396-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Molecular beam epitaxy of GaAs and AlGaAs on SiApplied Physics Letters, 1984
- GaAs Light Emitting Diodes Fabricated on SiO2/Si WafersJapanese Journal of Applied Physics, 1983
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Partial dislocations, columnar growth, clustering, and pinhole formation in ultrathin film semiconductor heterostructuresJournal of Vacuum Science and Technology, 1981
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systemsApplied Physics Letters, 1980
- Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)Applied Physics Letters, 1980
- Polar heterojunction interfacesPhysical Review B, 1978
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977