THM growth and properties of CuInSe2 single crystals
- 1 December 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 125 (3-4) , 548-552
- https://doi.org/10.1016/0022-0248(92)90295-t
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Growth of CuGaS2 Single Crystals by Traveling Heater MethodJapanese Journal of Applied Physics, 1990
- CuInSe/sub 2/ cells and modulesIEEE Transactions on Electron Devices, 1990
- Crystal growth of CuInSe2 by the Bridgman methodCanadian Journal of Physics, 1989
- Growth and characterization of bulk HgZnTe crystalsJournal of Crystal Growth, 1986
- Photoluminescence and photoconductivity ofPhysical Review B, 1985
- Photoluminescence studies of CuInSe2: Identification of intrinsic defect levelsProgress in Crystal Growth and Characterization, 1984
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983
- CdTe And CdTe : Hg alloys crystal growth using stoichiometric and off-stoichiometric zone passing techniquesRevue de Physique Appliquée, 1977
- Radiative recombination in melt-grown and Cd-implanted CuInSe2Journal of Applied Physics, 1976
- Vapour composition and critical constants of seleniumThe Journal of Chemical Thermodynamics, 1974