Evidence for the neutral charge state model of the DX center in aluminium gallium arsenide

This publication has 11 references indexed in Scilit:

• Deep donor levels (D X centers) in III-V semiconductors
  Journal of Applied Physics, 1990
• Pressure dependence of D X center mobility in highly doped GaAs
  Applied Physics Letters, 1989
• Chadi, Chang, and Walukiewicz reply
  Physical Review Letters, 1989
• Evidence against the negative-charge-state model for theDXcenter inn-type GaAs
  Physical Review Letters, 1989
• Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
  Physical Review Letters, 1988
• Comprehensive analysis of Si-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ ($x=0\mathrm{} \mathrm{to} 1$): Theory and experiments
  Physical Review B, 1984
• Investigation of persistent photoconductivity in Si-dopedn-Al x Ga1?x as grown by molecular beam epitaxy
  Applied Physics A, 1983
• Photoconductivity storage in Ga1−xAlxAs alloys at low temperatures
  Solid-State Electronics, 1982
• Electron scattering by ionized impurities in semiconductors
  Reviews of Modern Physics, 1981
• Long-lifetime photoconductivity effect in n-type GaAlAs
  Applied Physics Letters, 1977