Pressure dependence of D X center mobility in highly doped GaAs

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Abstract
The electron mobility of heavily n‐doped GaAs increases rapidly with applied hydrostatic pressure, as carriers are trapped at DX centers. This has been taken as evidence against the negative charge state model of the DX center (2d++2e−→d++DX−). However, here we use a modified Born approximation to analyze the pressure dependence of the mobility. It is energetically very favorable in highly doped samples for DX− centers to be formed close to d+ centers and we find that the experimental data are in fact fully consistent with the negative charge state model when such correlations are taken into account.