An induced base hot-electron transistor
- 1 April 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (4) , 178-180
- https://doi.org/10.1109/edl.1985.26088
Abstract
A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas induced by the collector field. The intrinsic delay time is estimated to be about 1 ps at room temperature with a common-base current gain close to unity.Keywords
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