Conduction-Band Density of States in Hydrogenated Amorphous Silicon Determined by Inverse Photoemission
- 8 October 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (15) , 1481-1484
- https://doi.org/10.1103/physrevlett.53.1481
Abstract
The first direct determination of the conduction band of hydrogenated amorphous silicon has been performed by means of x-ray inverse photoemission. We found a feature 1.2-4 eV above the Fermi level which may be associated, on the basis of its annealing behavior and energy position, with the Si-H antibonding orbital. Comparison with data on crystalline silicon clearly shows that the amorphous-silicon conduction-band density of states does not exhibit critical-point structures.Keywords
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