Contactless measurement of semiconductor conductivity by radio frequency-free-carrier power absorption
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 47 (7) , 799-805
- https://doi.org/10.1063/1.1134756
Abstract
It is shown that, under suitable conditions, the power absorbed by a thin semiconductor slice in an oscillating magnetic field is accurately proportional to the material conductivity. The magnitude of this power absorption can be used to determine the conductivity by coupling the semiconductor to an amplitude‐stabilized marginal oscillator and noting the power needed to maintain the demanded level of oscillation. Instruments of this type have been constructed exhibiting ∼1% linearity over a 100:1 range of sample conductivity, a resolution of ∼1 in 104 and a limiting sensitivity of ∼10−5 mho/⧠. The method may be applied to the measurement of essentially any conducting material from semiconductors to metals.Keywords
This publication has 8 references indexed in Scilit:
- Conductivity Measurements of Semiconductors by Microwave Transmission TechniqueReview of Scientific Instruments, 1971
- Application of Microwave Reflection Technique to the Measurement of Transient and Quiescent Electrical Conductivity of SiliconReview of Scientific Instruments, 1969
- Contactless Measurement of Resistivity of Slices of Semiconductor MaterialsReview of Scientific Instruments, 1967
- Noncontact Technique for the Local Measurement of Semiconductor ResistivityReview of Scientific Instruments, 1965
- A precise cavity technique for measuring low resistivity semiconductorsProceedings of the IEEE, 1965
- Resistivity Measurement of Semiconducting Epitaxial Layers by the Reflection of a Hyperfrequency Electromagnetic WaveIEEE Transactions on Instrumentation and Measurement, 1964
- Contactless resistivity meter for semiconductorsJournal of Scientific Instruments, 1961
- Nuclear resonance absorption circuitJournal of Scientific Instruments, 1959