A new approach to calculate the substrate current and oxide injection in a metal-oxide-semiconductor field-effect transistor
- 1 August 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (3) , 1435-1438
- https://doi.org/10.1063/1.344448
Abstract
We derive an analytical expression for the distribution function for high energetic carriers in an arbitrary two- or three-dimensional electric field utilizing Boltzmann’s equation. This distribution function is of Maxwell–Boltzmann type if the system attains thermal equilibrium. We apply this new model to calculate the substrate and gate currents in a metal-oxide-semiconductor field-effect transistor and compare it with measurements from various devices.This publication has 10 references indexed in Scilit:
- Electron energy distribution for calculation of gate leakage current in MOSFETsSolid-State Electronics, 1988
- The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistorsIEEE Transactions on Electron Devices, 1988
- MINIMOS 3: A MOSFET simulator that includes energy balanceIEEE Transactions on Electron Devices, 1987
- MOSFET substrate current model including energy transportIEEE Electron Device Letters, 1987
- A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulationIEEE Transactions on Electron Devices, 1987
- Modeling of 0.1-µm MOSFET on SOI structure using Monte Carlo simulation techniqueIEEE Transactions on Electron Devices, 1986
- An impact ionization model for two-dimensional device simulationIEEE Transactions on Electron Devices, 1985
- Lucky-drift mechanism for impact ionisation in semiconductorsJournal of Physics C: Solid State Physics, 1983
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962