Chemistry of fluorine in the oxidation of silicon
- 24 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2975-2977
- https://doi.org/10.1063/1.104686
Abstract
The chemical environment of fluorine in the oxide layer of metal-oxide-semiconductor (MOS) structures has been examined by surface analytical spectroscopies. HF treatment of Si(100) results in subsurface SiF formation. Upon oxidation, oxyfluoride moieties are formed with a significant accumulation of fluorine throughout the oxide layer. These changes are correlated to the electrical integrity of MOS interfaces by performing Fowler–Nordheim electron injection studies.Keywords
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