Properties of Silicon-on-Defect-Layer Material
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Novel semiconductor substrate formed by hydrogen ion implantation into siliconApplied Physics Letters, 1989
- The effect of radiation damage on carrier mobility in neutron-transmutation-doped siliconSemiconductor Science and Technology, 1988
- Carrier lifetime in argon-implanted siliconJournal of Applied Physics, 1984
- The Evaluation of Electrically Active Damage in Hot, Phosphorus Implantations in Silicon by Means of Hall-Effect MeasurementsPublished by Springer Nature ,1971