Carrier lifetime in argon-implanted silicon

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Abstract
The effects of argon-ion implantation upon the carrier lifetime in lightly phosphorus-doped silicon (ρ=600 Ω cm) are deduced by an analysis of the shape of the photoconductivity transients induced in the material by irradiation with picosecond laser pulses. The results obtained for samples subjected to 250-keV ion doses in the range 1013 −1015 cm−2, show that the carrier lifetime is reduced within a region which is considerably greater than the volume affected directly by the ions. Furthermore, deep-level transient spectroscopy measurements at the depths 2 and 3 μm reveal the creation of at least two new recombination centers in the band gap at the energy levels Ec −0.46 eV and Ev +0.44 eV, respectively. These levels are attributed to dislocations. Finally, other measurements show that, next to the surface, n-doped material can be converted into p type by this kind of implantation.