Energy dependence of amorphizing implant dose in silicon
- 1 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9) , 523-524
- https://doi.org/10.1063/1.89170
Abstract
The radiation‐induced transformation from crystalline to amorphous silicon was studied using ion implantation. The ion energy was varied from 20 to 180 keV for Li+, N+, Ne+, Ar+, and Kr+. The energy dependence of the critical amorphizing dose was determined by electron spin resonance. Comparison of the data with theoretical calculations of the energy density deposited into atomic processes showed good agreement. This energy‐dependent agreement gave evidence that energy density is important to the transformation at both low and high implantation temperatures.Keywords
This publication has 4 references indexed in Scilit:
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- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970