Stability of bulk and pseudomorphic epitaxial semiconductors and their alloys
- 15 February 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (6) , 3008-3024
- https://doi.org/10.1103/physrevb.37.3008
Abstract
The Landau-Lifshitz theory of structural phase transitions permits identification of distinct classes of ordered ternary structures (n=0–4) whose structural units are the C clusters spanning all possible nearest-neighbor environments in C pseudobinary semiconductor alloys. A detailed description of how disordered bulk or epitaxial alloys may be described as a superposition of such clusters is given. Using Landau-Lifshitz structures as examples, the very different energetics of bulk-versus-epitaxial (ordered or disordered) ternary phases are described and investigated quantitatively via a simple valence-force-field model and harmonic elasticity theory. Under epitaxial conditions on a substrate of lattice constant , a tetragonal degree of freedom for a ternary ordered compound controls the curvature about the minimum of the energy E(), while cell-internal structural parameters control the minimum of E and hence stability. Stable bulk compounds when grown under epitaxial conditions may change in relative stability, permitting artificial stabilization of desired ordered phases. Exotic ordered ternary compounds unstable in bulk form (and hence not found in the bulk phase diagram) may become stable when epitaxy-induced strain is accommodated more successfully in the ternary than in the binary constituents; the occurrence of miscibility gaps and spinodal decomposition for disordered alloys may be similarly suppressed under epitaxial conditions. Relaxation of cell-internal structural parameters is found crucial to a quantitative theoretical description of the enthalpies of mixing of bulk- or epitaxially-grown disordered alloys.
Keywords
This publication has 38 references indexed in Scilit:
- Long-range order in InxGa1−xAsApplied Physics Letters, 1987
- Atomic ordering in As and alloy semiconductorsPhysical Review Letters, 1987
- Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxyApplied Physics Letters, 1986
- Inelastic scattering of low-energy electrons from Sn overlayers on cleaved InSb(110) surfacesPhysical Review B, 1985
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985
- Sn overlayers on cleaved InSb(110) surfacesSurface Science, 1983
- InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxyApplied Physics Letters, 1982
- Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate LayerJournal of the Electrochemical Society, 1980
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- On the energy gap of cubic CdSPhysics Letters A, 1967