Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn0.85Cd0.15Se-ZnS0.08Se0.92 Multiple Quantum Wells

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Abstract
Stimulated emission from a Zn0.85Cd0.15Se-ZnS0.08Se0.92 multiple quantum well has been investigated in detail by means of photoluminescence excitation spectroscopy using a pulsed dye laser covering a spectral range from the lowest band edge to the higher subbands in the Zn0.85Cd0.15Se wells and including the band edge of the ZnS0.08Se0.92 barriers or confinement layers. It has been shown that the lowest thresholds are achieved when the layers are resonantly excited at the photon energy of the n= 1 heavy-hole exciton state, confirming that excitons play an important role in determing the lasing transition in this structure.