Defect formation in SiO2/Si(100) by metal diffusion and reaction
- 15 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (7) , 589-591
- https://doi.org/10.1063/1.100630
Abstract
The decomposition of SiO2 films on Si(100) during ultrahigh vacuum anneal is found to be strongly enhanced by monolayer amounts of impurities deposited on the SiO2 surface. s‐ and p‐band elements initiate decomposition via formation of volatile suboxides by surface reaction, whereas most transition metals decompose the oxide via laterally inhomogeneous growth of voids in the oxide. Transition metals need to diffuse to the SiO2/Si interface to enhance oxide decomposition via formation of volatile SiO. It is inferred that transition metal particles should be efficient in creating electrical defects in gate oxide layers.Keywords
This publication has 18 references indexed in Scilit:
- Stacking-fault-induced defect creation in SiO2 on Si(100)Applied Physics Letters, 1988
- Kinetics of high-temperature thermal decomposition of SiO2 on Si(100)Journal of Vacuum Science & Technology A, 1987
- Defect Microchemistry at the Si/Si InterfacePhysical Review Letters, 1987
- Defect formation in thermal SiO2 by high-temperature annealingApplied Physics Letters, 1986
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- Breakdown in silicon oxides—correlation with Cu precipitatesApplied Physics Letters, 1984
- Leakage and Breakdown in Thin Oxide Capacitors—Correlation with Decorated Stacking FaultsJournal of the Electrochemical Society, 1983
- Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2Journal of the Electrochemical Society, 1982
- Au and Al interface reactions with SiO2Applied Physics Letters, 1980
- Surface reactions on MOS structuresJournal of Applied Physics, 1974