A novel GaAs power MESFET with low distortion characteristics employing semi-insulating setback layer under the gate
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (2) , 193-200
- https://doi.org/10.1109/16.481717
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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